Sunday, June 03, 2007

Samsung Announces Ultra-dense 16GB NAND Flash Chip!!

Samsung proudly announced that it’s the first company ever to begin mass production of world’s most capacious NAND flash chip (16GB), using the 51-nanometer manufacturing process.
Samsung’s success is not only related to the impressive capacity of the NAND chip, it’s also tied to the read-write speeds, which have been improved. Apparently, thanks to the new fabrication process, read-write speeds can be accelerated with up to 80% compared to the actual flash modules. Read speed for today’s multi-level cell (MLC) NAND chips is limited to around 17MB/s, while the new 51-nm technology boosts that speed to no less than 30MB/s, almost two times faster. According to Samsung’s statement, NAND flash memory reads and writes data in units called “pages.” The 60nm NAND flash memory is designed with a 2 KiloByte (KB) page size, but the 51nm 16Gb version can process data in 4 KB pages, nearly doubling the data rate. The product also maintains the same 4 bit error-correcting code (ECC) capability as that of 60nm NAND, allowing customers to use existing system interfaces with only minor firmware upgrades. Samsung achieved the milestone just eight months after it started mass producing 8Gb NAND chips using 60nm technology in August.
Samsung also expects the new revolutionary chip to enter the mainstream market by the end of this year. Profits generated by the NAND flash industry are expected to reach $21 billion by 2010.

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